1 power transistors 2SD1269 silicon npn epitaxial planar type for power switching complementary to 2sb944 n features l low collector to emitter saturation voltage v ce(sat) l satisfactory linearity of foward current transfer ratio h fe l large collector current i c l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 130 80 7 8 4 35 2 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 100v, i e = 0 v eb = 5v, i c = 0 i c = 10ma, i b = 0 v ce = 2v, i c = 0.1a v ce = 2v, i c = 1a i c = 3a, i b = 0.15a i c = 3a, i b = 0.15a v ce = 10v, i c = 0.5a, f = 10mhz i c = 1a, i b1 = 0.1a, i b2 = C 0.1a, v cc = 50v min 80 45 60 typ 30 0.5 2.5 0.15 max 10 50 260 0.5 1.5 unit m a m a v v v mhz m s m s m s * h fe2 rank classification rank r q p h fe2 60 to 120 90 to 180 130 to 260 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2SD1269 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 8 6 2 5 7 4 1 3 i b =300ma 140ma 120ma 100ma 60ma 40ma 20ma 10ma t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =20 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 t c =100?c 25?c ?5?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =2v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =10v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 05 4 13 2 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =10 (i b1 =? b2 ) v cc =50v t c =25?c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c t=0.5ms 10ms 1ms dc collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2SD1269 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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